Dept. of Physics BGU
Tel: 972-8- 646-1648, Fax: 972-8- 647-2904
Room No. 210 building 54
We employ spatially, spectrally, and temporally resolved electron beam probes
to study the optical properties of semiconductor quantum heterostructures
and nanostructures (i.e., quantum wells, wires, and quantum dots).
Our current laboratory includes a low temperature cathodoluminescence (CL) system
with time-resolved and polarized detection capability mounted on a state-of-the-art scanning electron microscope (SEM).
The emphasis in this work is on studying simultaneously sub-micron scale spatial
and sub-nanosecond scale temporal variations in the optical properties
so that an understanding of the interrelationship between the microstructure
and the carrier relaxation dynamics can be established.
We have studied recently the optical properties of MBE- and MOCVD-grown
III-V (arsenides, nitrides, and phosphides), II-VI (sulfides, selenides and tellurides) quantum dot (QD) nanostructures,
laterally patterned thin-films and heterostructures.
We are examining the effects of local strain variations in heterostructures and nanostructures
induced by lattice and thermal mismatch on the resulting optical properties and carrier relaxation dynamics.